Compact model with physical parameter prediction capability for RF amplifiers

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Guillermo Rafael-Valdivia, Ph. D.


In this work presents an analysis of field effect transistors using pulsed voltage sources has been presented. Microwave measurements have been made in HEMT's and LDMOS technology devices highlighting the difference between the static and dynamic behavior of these devices. Based on measurements, data processing has been performed, deriving a new equation with the ability to reproduce both types of behavior with high precision and at different points of operation. Consequently, the work provides a new model based on a non-linear four-terminal circuit. The relevance of this model is the ability to predict physical effects such as frequency dispersion and electronic mobility of the semiconductor device. This is important because the frequency dispersion is one of the most important problems of modern communication systems that generates memory effects limiting the ability to transmit signals of high bandwidth. The fact of being able to predict the electronic mobility and the frequency dispersion help the circuit designer to improve their quality and design time. It also allows the RF component manufacturing industry to save production costs as this technique allows to predict the behavior of the circuits before implementing them. The presented methodology has been validated through the implementation of a power amplifier in LDMOS technology using the proposed technique. The proposed model is open since the proposed new technique can be implemented in any of the conventional models currently used in the industrial and academic field.


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[1] A. Eroglu, Introduction to RF Power Amplifier Design and Simulation, 1st Edition, NY, CRC Press, Jul. 2015.

[2] S. M. Sze, Physics of Semiconductor Devices. Bell Laboratories, 3rd Edition. Hoboken, NJ, USA, John Wiley & Sons Inc., Oct. 2006.

[3] C. Crespo-Cadenas, J. Reina, and M. Madero, “A Volterra-Based Procedure for Multi-Port and Multi-Zone GaN FET Amplifier CAD Simulation,” Transactions on circuits and systems, vol. 60 (11), pp. 3022-3032, Nov. 2013. DOI:

[4] T. Fernández, Y. Newport, J. M. Zamanillo, A. Tazón, and A. Mediavilla, “Modelling of Operating Point Non Linear Dependence of Ids Characteristics from Pulsed Measurements in MESFET transistors,” In 23 Eu.M.C., p. 518, Sep. 1993. DOI:

[5] G. Rafael Valdivia, J. M. Zamanillo, C. Pérez-Vega, T. Fernández, A. Mediavilla, and A. Tazón. “Método neurodifuso para la extracción de los elementos parásitos en MESFET y HEMT,” In: XVII Simposium Nacional de la Unión Científica Internacional de Radio, Alcalá de Henares, 2002.

[6] G. Dambrine, A. Cappy, F. Heliodore, and E. Playez, “A New Method for determining the FET small-signal equivalent circuit,” IEEE Transactions on Microwave Theory and Techniques, vol. 36 (7), pp. 1151-1159, Jul. 1988. DOI:

[7] T. Hackbarth, H.-J. Herzog, K.-H. Hieber, U. Konig, S. Mantl, B. Hollander, S. Lenk, and H. von Kanel, “Strained silicon FETs on thin SiGe virtual substrates produced by He implantation: reduced self-heating on DC and RF performance,” In: International Semiconductor Device Research Symposium, 2003. DOI:

[8] G. Rafael-Valdivia, R. Brady, and T. Brazil, “Single function drain current model for MESFET/HEMT devices including pulsed dynamic behavior,” In: IEEE MTT-S International Microwave Symposium Digest, Nov. 2006. DOI:

[9] V. Cojocaru, and T. Brazil, “A Scalable General-Purpose Model for microwave FET’s Including DC/AC dispersion effects,” IEEE Trans. on Microwave Theory and Techniques. vol. 45 (12), pp. 2248-2255, Dec. 1997. DOI:

[10] I. Angelov, H. Zirath, and N. Rorsman, “A new empirical nonlinear model for HEMT-devices,” In: IEEE MTT-S Microwave Symposium Digest, 1992. DOI:

[11] G. Rafael-Valdivia, and Z. Su, “Non-linear modeling for low and high power microwave transistors,” In: 46th European Microwave Conference (EuMC), 2016. DOI:

[12] C. Cassan, and G. Rafael-Valdivia. “Two-Stage LDMOS RFIC Drives WiMAX,” Microwaves & RF Journal, vol. 47(10), pp. 87-97, Oct. 2008.

[13] J. A. Pla, and D. Bridges, “A robust high voltage Si LDMOS model extraction process to achieve first pass linear RFIC amplifier design success,” In: IEEE MTT-S International Microwave Symposium Digest, 2002. DOI:

[14] G. Rafael-Valdivia, T. Férnández-Ibáñez, J. Rodríguez-Tellez, A. Tazón Puente, and A. Mediavilla-Sánchez, “Measurement of Mobility in HEMT Devices Using High-Order Derivatives,” IEEE Transactions on Electron Devices, vol. 51 (1), pp. 1-7, Jan. 2004. DOI:


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