Design and implementation of a power amplifier rf at 1.748GHz- Area of engineering
Abstract
Class F Amplifiers has high power efficiency as main characteristic, which makes them useful in
transmission circuits. This paper contains the design, simulation and implementation of an amplifier RF class F at 1.748 GHz, its importance, application and design. The implementation was realized by using of microstrip lines with RF 35 subtrate of the Taconic company. The obtained results are shown and its behavior is evaluated.
Keywords
amplifier class F, transistor ne6510173a, power dc efficiency, harmonics
References
- Aoki, N. , Asano, Y., Minova, M., y Takano, T. (1992): Improved Output spectrum of linearized class-F power amplifier for digital cellular mobile communications IEEE.
- Davis, W.A., y Agarwal,K.R. (2001): Radio frequency circuit design, ed, New York, John Wiley.
- Duvanaud, C., Dietsche, S., Pataut, G., y Obregon, J. (1993): High Efficient class F GaAs FET Amplifiers Operating with very low bias voltages for use in mobil telephones at 1.75 Ghz. IEEE Microwave, Vol. 7, pp. 40-48.
- Gonzalez, G., Microwave Transistor Amplifiers (1997):New Jersey, Prentice Hall, 2nd ed.
- Pozar, D., Microwave Transistor Amplifiers (1998): 2 nd ed. (ed), New York, Jhon Wiley.
- Pozar, D., (2001): Microwave and RF design of wireless systems, Ed, New York, John Wiley.
- Rohde, U.L., Newkirk D.P., (2000): RF/Microwave circuit design for wireless aplications, ed, New York, Jhon Wiley.
- Rudiakova, A.N., (2005): BJT Class-F Power Amplifier near Transition Frequency, IEEE Transantions on Microwave Theory and Techniques, Vol. 53, pp. 45-50.
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