Closed equations for the design of class f amplifiers
Abstract
This paper shows a methodology for designing class F amplifiers based on closed equations that allow the direct calculation of the output matching network. For the sake of proving, a prototype has been carried out using the Cree´s device GaN HEMT CGH40010, obtaining a maximum drain efficiency of 65 %, small signal gain of 14.2 dB and saturated output power of 41 dBm, using sinusoidal excitation. The drain voltage and current waveforms are coherent with theory and the results in continuous-wave are outstanding.
Keywords
GaN-HEMT, power amplifier, high efficiency, HEMTs, microwave amplifier.
Author Biography
Jorge Julián Moreno-Rubio
Ingeniero Electrónico, Magister en Ingeniería Electrónica y
Doctor en Dispositivos Electrónicos. Profesor Asistente, Universidad Pedagógica y Tecnológica de Colombia
Javier Francisco Rodríguez-Mora
Ingeniero de Sistemas, Candidato a Magister en Tecnología Informática
Nydia Esperanza Cely-Angarita
Ingeniero de Sistemas, Candidato a Magister en Tecnología Informática Grupo de Investigación en Telecomunicaciones
Edison Ferney Angarita-Malaver
Ingeniero Electrónico, Estudiante de Maestría en Ingeniería. Grupo de Investigación en Telecomunicaciones
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